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 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC4603R
DESCRIPTION *High Collector-Emitter Breakdown Voltage: V(BR)CEO= 800V(Min.) *High Switching Speed *High Reliability
APPLICATIONS *Switching regulators *Ultrasonic generators *High frequency inverters *General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL VCBO VCEO VEBO IC IB
B
PARAMETER Collector-Base Voltage
Collector-Emitter Voltage Emitter-Base voltage
Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range
w w
scs .i w
VALUE 900 UNIT V 800 10 3 1 80 150 -55~150 V V A A W
.cn mi e
PC TJ Tstg
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.5 UNIT /W
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC4603R
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 10mA; IB= 0
800
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
900
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
10
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
B
1.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
B
1.5
V
ICBO
Collector Cutoff Current
VCB= 900V; IE= 0
IEBO
Emitter Cutoff Current
hFE
DC Current Gain
Switching times
ton
Turn-on Time
tstg
Storage Time
w w
scs .i w
VEB= 10V; IC= 0
IC= 1A; VCE= 5V
.cn mi e
10
1.0
mA
1.0
mA
1.0
s
IC= 2A, IB1= 0.4A; IB2= -0.8A; RL= 150; PW= 20s; Duty Cycle2%
4.0
s
tf
Fall Time
0.8
s
isc Websitewww.iscsemi.cn
2


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